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IRF321 |
Samsung semiconductor |
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N-channel power mosfets |
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IRF321 |
Fairchild Semiconductor |
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N-channel power mosfets, 3.0 A, 350-400 V |
|
IRF321 |
Intersil Corporation |
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|
2.8A and 3.3A, 350v and 400v, 1.8 and 2.5 ohm, N-channel power mosfets |
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IRF323 |
Samsung semiconductor |
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|
N-channel power mosfets |
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IRF322 |
Intersil Corporation |
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|
2.8A and 3.3A, 350v and 400v, 1.8 and 2.5 ohm, N-channel power mosfets |
|
IRF322 |
Samsung semiconductor |
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|
N-channel power mosfets |
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IRF323 |
Fairchild Semiconductor |
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|
N-channel power mosfets, 3.0 A, 350-400 V |
|
IRF323 |
Intersil Corporation |
|
|
2.8A and 3.3A, 350v and 400v, 1.8 and 2.5 ohm, N-channel power mosfets |
|
IRF530 |
Samsung semiconductor |
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|
N-channel power mosfets |
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IRF530 |
Fairchild Semiconductor |
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半导体
|
N-channel power mosfets, 20 A, 60-100 V |
|
IRF530 |
Harris Corporation |
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N-channel power mosfets avalanche energy rated |
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IRF721 |
Samsung semiconductor |
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|
N-channel power mosfets |
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IRF721 |
Fairchild Semiconductor |
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|
N-channel power mosfets, 3.0 A, 350-400 V |
|
IRF722 |
Fairchild Semiconductor |
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|
N-channel power mosfets, 3.0 A, 350-400 V |
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IRF723 |
Fairchild Semiconductor |
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|
N-channel power mosfets, 3.0 A, 350-400 V |
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IRF730 |
Fairchild Semiconductor |
|
|
N-channel power mosfets, 5.5A, 350 V/400v |
|
IRF330 |
Samsung semiconductor |
|
|
N-channel power mosfets |
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IRF331 |
Samsung semiconductor |
|
|
N-channel power mosfets |
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IRF322 |
Fairchild Semiconductor |
|
|
N-channel power mosfets, 3.0 A, 350-400 V |
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IRF330-333 |
Fairchild Semiconductor |
|
|
N-channel power mosfets, 5.5A, 350 V/400v |