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图片 型号 厂商 标准 分类 描述
Image: GP2W1001YP GP2W1001YP Sharp Electrionic Components device specipication for optical data communication transceiver
Image: PHM008 PHM008 Polyfet RF Devices the phm008 is a dual stage amplifier specifically designed for land mobile
Image: X211 X211 ETC x200 series (cmos) standard specfitions
Image: X211-883B X211-883B ETC x200 series (cmos) standard specfitions
Image: LD1207 LD1207 ETC the ld1207 is specifically designed for led display drivers
Image: NSVA397 NSVA397 New Japan Radio 422.2mhz specified low power radio station
Image: 7343-2USRC 7343-2USRC ETC the series is specially designed for applications requiring higher brightness.
Image: 7343-S1060 7343-S1060 ETC the series is specially designed for applications requiring higher brightness.
Image: KA3S0965RF KA3S0965RF Fairchild Semiconductor the sps product family is specially designed for an off line smps with minimal external component
Image: B3-28 B3-28 ETC specifically designed for vhf broadband linear power amplifier
Image: RD100HHF1 RD100HHF1 Mitsubishi Electric mos fet type transistor specifically designed for HF high power amplifiers applications.
Image: LTE-5208A LTE-5208A Lite-On Technology Corporation mechanically and spectrally matched TO the ltr - 3208 series IF phototransistor
Image: CDC960 CDC960 Texas Instruments 半导体 200-mhz clock synthesizer/driver with spread specturm capability and device control interface
Image: SI692DQ SI692DQ Fairchild Semiconductor dual N-channel 2.5V specified powertrench mosfet
Image: SI6926DQ SI6926DQ Fairchild Semiconductor dual N-channel 2.5V specified powertrench mosfet
Image: NSVS614 NSVS614 New Japan Radio 429.42 mhz specified low power radio station
Image: AN202 AN202 ETC testing and specifying fast logic
Image: FDG6308 FDG6308 Fairchild Semiconductor 半导体 P-channel 1.8V specified powertrench mosfet
Image: FDJ129 FDJ129 Fairchild Semiconductor P-channel -2.5 vgs specified powertrench mosfet
Image: FDG326 FDG326 Fairchild Semiconductor 半导体 P-channel 1.8V specified powertrench mosfet

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