|
PEMD30,315 |
NXP Semiconductors |
 |
半导体
分离式半导体
|
transistors switching - resistor biased transdigital bjt npn pnp 50v 100ma 6-pin |
|
|
PEMD9,315 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased transdigital bjt npn pnp 50v 200mw |
|
RURG80100 |
Fairchild Semiconductor |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching TO-247 ultra fast |
|
|
PEMH13,315 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased 50v 200mw npn/pnp resistor-equip trans |
|
|
PEMB30,315 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased transdigital bjt pnp 50v 100ma 6-pin |
|
|
PEMH2,315 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased 50v 200mw npn/pnp resistor-equip trans |
|
D291S45T |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching fast diode 4500v 290a |
|
|
BAS21AVD,135 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching bas21avd/sot457/reel |
|
STGW60H65F |
STMicroelectronics |
|
半导体
分离式半导体
|
igbt transistors 60a 650v fst igbt very high switching |
|
|
STTH100W06CW |
STMicroelectronics |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching turbo 2 ultrafast 2x50a 600v 0.92vf |
|
IDW10S120FKSA1 |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching sic diodes |
|
STTH200W06TV1 |
STMicroelectronics |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching turbo 2 ultrafast 2x100a 600v 1.0vf |
|
|
D170S25C |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 2.5kv 255a |
|
PIMD2,125 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased transdigital bjt npn pnp 50v 100ma 6-pin |
|
BAS321,135 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode ult fast recov rectifier 250v 0.25a |
|
PUMD12,135 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased npn/npn resistor equipped transistor |
|
|
PUMD10,125 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors switching - resistor biased trans digital bjt npn/pnp 50v 6-pin |
|
|
D650S12T |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching fast diode 1200v 620a |
|
|
D650S14T |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching fast diode 1400v 620a |
|
|
MA4AGBLP912 |
MACOM |
|
半导体
分离式半导体
|
pin diodes .1-40ghz 5ns switching speed |
