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图片 型号 厂商 标准 分类 描述
Image: MAX3222CWN MAX3222CWN Maxim Integrated 半导体 3.0V to 5.5V, low-power, up to 1mbps, true RS-232 transceivers using four 0.1レF external capacitors
Image: KMM372V404BS KMM372V404BS Samsung semiconductor 4M x 72 dram dimm with ecc using 4mx16, 4mx4 4K refresh, 3.3V
Image: 1N4001G 1N4001G Philips Semiconductors rectifiers(rugged glass package, using a high temperature alloyed construction)
Image: 1N4002G 1N4002G Philips Semiconductors rectifiers(rugged glass package, using a high temperature alloyed construction)
Image: 1N4003G 1N4003G Philips Semiconductors rectifiers(rugged glass package, using a high temperature alloyed construction)
Image: 1N4004G 1N4004G Philips Semiconductors rectifiers(rugged glass package, using a high temperature alloyed construction)
Image: 1N4005G 1N4005G Philips Semiconductors rectifiers(rugged glass package, using a high temperature alloyed construction)
Image: 1N4006G 1N4006G Philips Semiconductors rectifiers(rugged glass package, using a high temperature alloyed construction)
Image: 1N4007G 1N4007G Philips Semiconductors rectifiers(rugged glass package, using a high temperature alloyed construction)
Image: KMM372V3280CS1 KMM372V3280CS1 Samsung semiconductor 32m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh, 3.3V
Image: KMM5328004BSW KMM5328004BSW Samsung semiconductor 8M x 32 dram simm using 4mx16, 4K refresh, 5V
Image: KMM5328004CSW KMM5328004CSW Samsung semiconductor 8M x 32 dram simm using 4mx16, 4K refresh, 5V
Image: KMM372F3280CS1 KMM372F3280CS1 Samsung semiconductor 32m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh, 3.3V
Image: Q67000-A5066 Q67000-A5066 Siemens Semiconductor Group control IC for switched-mode power supplies using mos-transistor
Image: TC5565AFL-10 TC5565AFL-10 Toshiba Semiconductor and Storage 65,536 bit static random access memory organized as 8,192 words by 8 bits using cmos technology
Image: TC5565AFL-12 TC5565AFL-12 Toshiba Semiconductor and Storage 65,536 bit static random access memory organized as 8,192 words by 8 bits using cmos technology
Image: TC5565AFL-15 TC5565AFL-15 Toshiba Semiconductor and Storage 65,536 bit static random access memory organized as 8,192 words by 8 bits using cmos technology
Image: RSBL-12 RSBL-12 ETC using permanent magnet, high sensitivity two poles signal relay rsb relayS
Image: RSBL-12-S RSBL-12-S ETC using permanent magnet, high sensitivity two poles signal relay rsb relayS
Image: RSBL-3-S RSBL-3-S ETC using permanent magnet, high sensitivity two poles signal relay rsb relayS

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