Image 1N4148
型号: 1N4148
厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: diodes - general purpose, power, switching 100v Io/200ma bulk
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1N4148的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: Diodes - General Purpose, Power, Switching
RoHS: Yes
Peak Reverse Voltage: 100 V
Forward Continuous Current: 0.3 A
Max Surge Current: 4 A
Configuration: Single
Recovery Time: 4 ns
Forward Voltage Drop: 1 V at 0.01 A
Maximum Reverse Leakage Current: 5 uA
Mounting Style: Through Hole
Package / Case: DO-35
Packaging: Bulk
Brand: Fairchild Semiconductor
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 65 C
Series: 1N4148
Factory Pack Quantity: 2000
Part # Aliases: 1N4148_NL
Unit Weight: 126 mg
April 2013  
1N/FDLL 914A/B / 916/A/B / 4148 / 4448  
Small Signal Diode  
Cathode Band  
LL-34 COLOR BAND MARKING  
DEVICE  
1ST BAND  
FDLL914  
BLACK  
BLACK  
BLACK  
BLACK  
BLACK  
FDLL914A  
FDLL914B  
FDLL4148  
FDLL4448  
SOD80  
LL-34  
DO-35  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
-1st band denotes cathode terminal  
and has wider width  
Cathode is denoted with a black band  
Absolute Maximum Ratings(1)  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Value  
100  
Units  
V
VRRM  
IO  
IF  
If  
Average Rectified Forward Current  
DC Forward Current  
200  
mA  
mA  
mA  
A
300  
Recurrent Peak Forward Current  
400  
Pulse Width = 1.0 s  
1.0  
IFSM  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 μs  
4.0  
A
TSTG  
Storage Temperature Range  
-65 to +200  
175  
°C  
TJ  
Operating Junction Temperature  
°C  
Note:  
1. These ratings are limiting values above which the serviceability of the diode may be impaired.  
Thermal Characteristics  
Max.  
Symbol  
Parameter  
Units  
1N/FDLL 914/A/B / 4148 / 4448  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
500  
300  
mW  
RθJA  
°C/W  
© 2007 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.1  
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