|
Central Semiconductor 
Datasheet下载地址
| 本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
2N2222的详细信息
| Manufacturer： | Central Semiconductor |
|---|---|
| Product Category： | Transistors Bipolar - BJT |
| RoHS： | Yes |
| Brand： | Central Semiconductor |
| Configuration： | Single |
| Transistor Polarity： | NPN |
| Collector- Base Voltage VCBO： | 60 V |
| Collector- Emitter Voltage VCEO Max： | 30 V |
| Emitter- Base Voltage VEBO： | 5 V |
| Collector-Emitter Saturation Voltage： | 1.6 V |
| Maximum DC Collector Current： | 0.8 A |
| Gain Bandwidth Product fT： | 250 MHz |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | Through Hole |
| Package / Case： | TO-18 |
| Continuous Collector Current： | 0.45 A |
| DC Collector/Base Gain hfe Min： | 35 |
| Maximum Power Dissipation： | 0.4 W |
| Minimum Operating Temperature： | - 65 C |
| Packaging： | Bulk |
| Series： | 2N2222 |
| Factory Pack Quantity： | 2000 |
2N2221
2N2222
www.centralsemi.com
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221 and
2N2222 are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
V
V
V
60
30
CBO
CEO
EBO
V
V
5.0
I
800
mA
mW
W
C
P
500
D
D
Power Dissipation (T =25°C)
C
P
1.2
Operating and Storage Junction Temperature
T , T
-65 to +200
350
°C
J
stg
Thermal Resistance
Θ
°C/W
°C/W
JA
JC
Thermal Resistance
Θ
146
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=50V
-
10
nA
CBO
CBO
EBO
CB
CB
EB
=50V, T =150°C
A
=3.0V
-
-
10
10
-
μA
nA
V
BV
BV
BV
I =10μA
60
30
5.0
-
CBO
C
I =10mA
-
V
CEO
C
I =10μA
-
V
EBO
E
V
V
V
V
I =150mA, I =15mA
0.4
1.6
1.3
2.6
-
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
C
B
I =500mA, I =50mA
-
V
C
B
I =150mA, I =15mA
0.6
-
V
C
B
I =500mA, I =50mA
V
C
B
f
V
=20V, I =20mA, f=100MHz
250
-
MHz
pF
pF
T
CE
CB
EB
C
C
V
V
=10V, I =0, f=100kHz
8.0
30
ob
ib
E
C
=0.5V, I =0, f=100kHz
-
C
R2 (24-July 2013)
扫码用手机查看Datasheet
更方便
扫码关注嵌入式ARM
同类器件
-
简单音频设备控制APP
预算：￥100002天前
-
海思方案水下摄像头模组开发
预算：￥20000019小时前
-
STM32项目
预算：￥5000019小时前
-
STM32F项目
预算：￥019小时前
-
钜泉HT5019芯片开发
预算：￥1600023小时前
-
脉冲，相位测距仪
预算：￥700001天前
