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2N7000的详细信息
Manufacturer: | Fairchild Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 200 mA |
Rds On - Drain-Source Resistance: | 1.2 Ohms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 400 mW |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 |
Packaging: | Bulk |
Brand: | Fairchild Semiconductor |
Channel Mode: | Enhancement |
Forward Transconductance - Min: | 0.1 S |
Minimum Operating Temperature: | - 55 C |
Series: | 2N7000 |
Factory Pack Quantity: | 2000 |
Part # Aliases: | 2N7000_NL |
Unit Weight: | 201 mg |
November
1995
2N7000 / 2N7002 / NDS 7002A
N-Channel
Enhancement Mode Fi eld Ef f ect Tr ansi st or
GeneralDescri pt i on
Feat ures
Hi gh densi t y cel l defsiogrlnow R
N- C hannel enhancement mode f i el d ef f ect t r ansi st or s
.
These
ar e pr oduced usi ng Fai r chi l d's pr opr i et ar y, hi gh cel l densi t y,
DS( ON)
Vol t age cont r ol l ed smal l si gnal swi t ch.
Rugged and r el i abl e.
DMOS t echnol ogy.
These pr oduct s have been desi gned t o
mi ni mi ze on- st at e r esi st ance whi l e pr ovi de r ugged, r el i abl e,
and f ast swi t chi ng per f orTmhaeny cec. an be used i n most
appl i cat i ons r equi r i ng up t o 400mA DC and can del i ver
Hi gh sat ur at i on cur r ent capabi l i t y.
pul sed cur r ent s up t o 2A.
These pr oduct s ar e par t i cul ar l y
sui t ed f or l ow vol t age, l ow cur r ent appl i cat i ons such as smal l
ser vo mot or cont r ol , power MOSFET gat e dr i ver s, and ot her
swi t chi ng appl i cat i ons.
___________________________________________________________________________________________
D
G
D
G
S
TO- 92
2N7000
S
( TO-236AB)
2N7002/ NDS 7002A
Absolut e Maxi mum R at i ngs T A = 25°C unl ess ot her wi se not ed
2N7000
2N7002
NDS 7002A
S ymbol
Par amet er
Uni t s
VDSS
Dr ai n- Sour ce Vol t age
6 0
6 0
V
V
VDGR
Dr ai n- Gat e Vol t age GS( R< 1 WM)
VGSS
Gat e- Sour ce Vol t age - Cont i nuous
V
±20
-
Non Repet i t i ve ( t p
<
50µs)
±40
ID
Maxi mum Dr ai n Cur r ent
-
Cont i nuous
Pul sed
200
115
8 00
200
28 0
mA
-
500
1500
3 00
PD
Maxi mum Power Di ssi pat i on
Der at ed above 25 o C
400
3 . 2
mW
1. 6
2. 4
mW/ °C
T J, T
Oper at i ng and St or age Temper at ur e Range
- 55 t o 150
- 6 5 t o 150 °C
°C
STG
T L
Maxi mum Lead Temper at ur e f or Sol der i ng
3 00
6 25
Pur poses, 1/ 16 " f r om Case f or 10 Seconds
THER MALCHAR ACTER I S TI CS
Ther mal Resi st ance, J unct i on- t o- Ambi ent
3 12. 5
417
°C/ W
R
J A
q
© 1997 Fairchild Semiconductor Corporation
2N7000. SAM Rev. A1
2N7000相关文档
- Application Note: AN-7510: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options
- Application Note: AN-7533: A Revised MOSFET Model With Dynamic Temperature Compensation
- Application Note: AN-9010: MOSFET Basics
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