厂商Fairchild Semiconductor 半导体分离式半导体 2N7002 数据手册，datasheet pdf下载

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型号：	2N7002
厂商：	Fairchild Semiconductor
标准：
分类：	半导体，分离式半导体
描述：	mosfet N-channel 60v 115ma
PDF：	预览
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2N7002的详细信息

Manufacturer：	Fairchild Semiconductor
Product Category：	MOSFET
RoHS：	Yes
Transistor Polarity：	N-Channel
Vds - Drain-Source Breakdown Voltage：	60 V
Vgs - Gate-Source Breakdown Voltage：	20 V
Id - Continuous Drain Current：	120 mA
Rds On - Drain-Source Resistance：	1.2 Ohms
Configuration：	Single
Maximum Operating Temperature：	+ 150 C
Pd - Power Dissipation：	200 mW
Mounting Style：	SMD/SMT
Package / Case：	SOT-23-3
Packaging：	Reel
Brand：	Fairchild Semiconductor
Channel Mode：	Enhancement
Forward Transconductance - Min：	0.08 S
Minimum Operating Temperature：	- 55 C
Series：	2N7002
Factory Pack Quantity：	3000
Part # Aliases：	2N7002_NL
Unit Weight：	60 mg

November

1995

2N7000 / 2N7002 / NDS 7002A

N-Channel

Enhancement Mode Fi eld Ef f ect Tr ansi st or

GeneralDescri pt i on

Feat ures

Hi gh densi t y cel l defsiogrlnow R

N- C hannel enhancement mode f i el d ef f ect t r ansi st or s

These

ar e pr oduced usi ng Fai r chi l d's pr opr i et ar y, hi gh cel l densi t y,

DS( ON)

Vol t age cont r ol l ed smal l si gnal swi t ch.

Rugged and r el i abl e.

DMOS t echnol ogy.

These pr oduct s have been desi gned t o

mi ni mi ze on- st at e r esi st ance whi l e pr ovi de r ugged, r el i abl e,

and f ast swi t chi ng per f orTmhaeny cec. an be used i n most

appl i cat i ons r equi r i ng up t o 400mA DC and can del i ver

Hi gh sat ur at i on cur r ent capabi l i t y.

pul sed cur r ent s up t o 2A.

These pr oduct s ar e par t i cul ar l y

sui t ed f or l ow vol t age, l ow cur r ent appl i cat i ons such as smal l

ser vo mot or cont r ol , power MOSFET gat e dr i ver s, and ot her

swi t chi ng appl i cat i ons.

___________________________________________________________________________________________

TO- 92

2N7000

( TO-236AB)

2N7002/ NDS 7002A

Absolut e Maxi mum R at i ngs T _A= 25°C unl ess ot her wi se not ed

2N7000

2N7002

NDS 7002A

S ymbol

Par amet er

Uni t s

V_DSS

Dr ai n- Sour ce Vol t age

6 0

V_DGR

Dr ai n- Gat e Vol t age _GS( R< 1 WM)

V_GSS

Gat e- Sour ce Vol t age - Cont i nuous

±20

Non Repet i t i ve ( t p

50µs)

±40

I_D

Maxi mum Dr ai n Cur r ent

Cont i nuous

Pul sed

200

115

8 00

200

28 0

500

1500

3 00

P_D

Maxi mum Power Di ssi pat i on

Der at ed above 25 ^oC

400

3 . 2

1. 6

2. 4

mW/ °C

T _J, T

Oper at i ng and St or age Temper at ur e Range

- 55 t o 150

- 6 5 t o 150 °C

°C

STG

T _L

Maxi mum Lead Temper at ur e f or Sol der i ng

3 00

6 25

Pur poses, 1/ 16 " f r om Case f or 10 Seconds

THER MALCHAR ACTER I S TI CS

Ther mal Resi st ance, J unct i on- t o- Ambi ent

3 12. 5

417

°C/ W

J A

2N7000. SAM Rev. A1

2N7002相关文档

EOL: Fairchild Semiconductor - EOL 3-29-10
Application Note: AN-558: Introduction to Power MOSFETs and their Applications
Application Note: AN-7510: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options
Application Note: AN-7533: A Revised MOSFET Model With Dynamic Temperature Compensation
Application Note: AN-8018: FAN9612 400W 4-Layer Evaluation Board User Guide (FEB279) OBSOLETE! FEB279 Replaced by FEB388
Application Note: AN-8021: Building Variable Output Voltage Boost PFC Converters with the FAN9612 Interleaved BCM PFC Controller
Application Note: AN-8021SC: Building Variable Output Voltage Boost PFC Converters with the FAN9612 Interleaved BCM PFC Controller (Chinese Translation)
Application Note: AN-8026: FAN9611 / FAN9612 400W 1-Layer Evaluation Board User Guide (FEB301)
Application Note: AN-9010: MOSFET Basics
PCN: DESIGN/PROCESS CHANGE NOTIFICATION
PCN: Design / Process Change Notification

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