Image 2N7002DW H6327
型号:

2N7002DW H6327

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 阵列
描述: mosfet 2N-CH 60v 0.3A sot363
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2N7002DW H6327的详细信息

Datasheets:
2N7002DW Datasheet:
Product Photos:
SOT-363 PKG:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) @ Vgs: 0.6nC @ 10V
Input Capacitance (Ciss) @ Vds: 20pF @ 25V
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: 2N7002DW H6327-ND2N7002DWH63272N7002DWH6327XTSA1SP000917596