Image 2SD2012
型号:

2SD2012

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt npn silcon pwr trans
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2SD2012的详细信息

Manufacturer: STMicroelectronics
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Brand: STMicroelectronics
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 60 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 0.4 V
Maximum DC Collector Current: 3 A
Gain Bandwidth Product fT: 3 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-220F
DC Collector/Base Gain hfe Min: 20
DC Current Gain hFE Max: 320
Maximum Power Dissipation: 25 W
Minimum Operating Temperature: - 65 C
Packaging: Tube
Series: 2SD2012
Factory Pack Quantity: 1000