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Toshiba Semiconductor and Storage 
2SK3798(Q,M)的详细信息
| Datasheets： | |
|---|---|
| 2SK3798： | |
| Mosfets Prod Guide： | |
| Product Photos： | |
| TO-220AB： | |
| Standard Package ： | 50 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | - |
| Packaging ： | Bulk |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Standard |
| Drain to Source Voltage (Vdss)： | 900V |
| Current - Continuous Drain (Id) @ 25°C： | 4A (Ta) |
| Rds On (Max) @ Id, Vgs： | 3.5 Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id： | 4V @ 1mA |
| Gate Charge (Qg) @ Vgs： | 26nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 800pF @ 25V |
| Power - Max： | 40W |
| Mounting Type： | Through Hole |
| Package / Case： | TO-220-3 Full Pack |
| Supplier Device Package： | TO-220SIS |
| Other Names： | 2SK3798(Q)2SK3798(Q)-ND2SK3798(QM) |
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