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| 型号： | BLA6G1011LS-200RG, |
| 厂商： |
 NXP Semiconductors |
| 标准： |   |
| 分类： | 半导体 ， 分离式半导体 |
| 描述： | transistors RF mosfet pwr ldmos transistor |
| 报错 收藏 赞 | |
Datasheet下载地址
| 厂商下载2 >> 第三方平台下载 >> |
BLA6G1011LS-200RG,的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | Transistors RF MOSFET |
| RoHS： | Yes |
| Configuration： | Single |
| Transistor Polarity： | N-Channel |
| Frequency： | 1.03 GHz to 1.09 GHz |
| Gain： | 20 dB |
| Output Power： | 200 W |
| Vds - Drain-Source Breakdown Voltage： | 65 V |
| Id - Continuous Drain Current： | 49 A |
| Vgs - Gate-Source Breakdown Voltage： | 13 V |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOT-502C |
| Packaging： | Tube |
| Brand： | NXP Semiconductors |
| Factory Pack Quantity： | 20 |
| Vgs th - Gate-Source Threshold Voltage： | 2 V |
BLA6G1011LS-200RG,相关文档
- Simulation model: RF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)
- Simulation model: RF Power Simulation Example for MicroWave Office (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Other type: PCB Design BLA6G1011-200R & BLA6G1011L(S)-200RG 1030-1090 MHz Pulsed-RF (Data sheet) (v.1.0)
- Brochure: High performance aerospace and defense solutions (v.1.2)
- Simulation model: BLA6G1011-200R ADS Model (v.1.0)
- Simulation model: RF Power Model Library for MicroWave Office (v.2.2)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
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