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BLF244,112的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | Transistors RF MOSFET |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Configuration: | Single |
Transistor Polarity: | N-Channel |
Frequency: | 175 MHz |
Gain: | 17 dB |
Output Power: | 15 W |
Vds - Drain-Source Breakdown Voltage: | 65 V |
Id - Continuous Drain Current: | 3 A |
Vgs - Gate-Source Breakdown Voltage: | +/- 20 V |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-123A |
Packaging: | Tube |
Minimum Operating Temperature: | - 65 C |
Pd - Power Dissipation: | 38 W |
Product Type: | RF MOSFET Power |
Rds On - Drain-Source Resistance: | 1.5 Ohms |
Factory Pack Quantity: | 20 |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Part # Aliases: | BLF244 |
BLF244,112相关文档
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Application note: A wideband 30 W push-pull amplifier with two MOS transistors BLF244 (VDS = 28 V); range 25-110MHz (v.1.0)
- Line card: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS (v.1.1)
- Application note: Linear performance of BLF244 in S.S.B. class-A operation (v.1.0)
- SPICE model: BLF244_28V_25mA SPICE model (v.1.3)
- SPICE model: BLF244_12_5V_25mA SPICE model (v.1.3)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Application note: Performance of 30 W push-pull amplifier for freq. range 25 - 110 MHz with 2 MOS transistors BLF244 (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- SPICE model: BLF244_14V_25mA SPICE model (v.1.3)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- EOL: Customer Information Notification
- EOL: Discontinuation Notification
- PCN: Customer Information Notification
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