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型号: | BLS7G2325L-105,112 |
厂商: |
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标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | transistors RF mosfet power ldmos transistor |
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Datasheet下载地址
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BLS7G2325L-105,112的详细信息
Manufacturer: | NXP |
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Product Category: | Transistors RF MOSFET |
RoHS: | Yes |
Frequency: | 2300 MHz to 2500 MHz |
Gain: | 18 dB |
Output Power: | 20 W |
Vds - Drain-Source Breakdown Voltage: | 65 V |
Id - Continuous Drain Current: | 28 A |
Vgs - Gate-Source Breakdown Voltage: | 1.8 V |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-502A |
Packaging: | Tube |
Brand: | NXP Semiconductors |
Factory Pack Quantity: | 20 |
BLS7G2325L-105,112相关文档
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Brochure: High performance aerospace and defense solutions (v.1.2)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
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