Image BSC052N03S G
型号:

BSC052N03S G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 30v 80a tdson-8
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BSC052N03S G的详细信息

Datasheets:
BSC052N03S G:
Product Photos:
8-PowerTDFN:
Standard Package : 5,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) @ Vds: 2820pF @ 15V
Power - Max: 54W
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8 (5.15x6.15)
Other Names: BSC052N03SGXTSP000056192