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Infineon Technologies 
BSC100N03MS G的详细信息
| Manufacturer： | Infineon |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | Infineon Technologies |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 30 V |
| Vgs - Gate-Source Breakdown Voltage： | 16 V |
| Id - Continuous Drain Current： | 12 A |
| Rds On - Drain-Source Resistance： | 10 mOhms |
| Configuration： | Single Quad Drain Triple Source |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 2.5 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | TDSON-8 |
| Packaging： | Reel |
| Channel Mode： | Enhancement |
| Fall Time： | 5.4 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 4.8 ns |
| Series： | BSC100N03 |
| Factory Pack Quantity： | 5000 |
| Tradename： | OptiMOS |
| Typical Turn-Off Delay Time： | 8 ns |
| Part # Aliases： | BSC100N03MSGATMA1 SP000311515 |
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