Image BSC152N10NSF G
型号:

BSC152N10NSF G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 100v 63a tdson-8
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BSC152N10NSF G的详细信息

Datasheets:
BSC152N10NSF G:
Product Photos:
8-PowerTDFN:
PCN Obsolescence/ EOL:
Multiple Devices 30/Aug/2013:
Standard Package : 5,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.2 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 72µA
Gate Charge (Qg) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) @ Vds: 1900pF @ 50V
Power - Max: 114W
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8 (5.15x6.15)
Other Names: BSC152N10NSFGATMA1SP000379601