Image BSO150N03MD G
型号:

BSO150N03MD G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosfet optimos 3 M-series pwr-mosfet dual N-CH
报错 收藏

BSO150N03MD G的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Brand: Infineon Technologies
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Breakdown Voltage: 16 V
Id - Continuous Drain Current: 9.3 A
Rds On - Drain-Source Resistance: 15 mOhms
Configuration: Dual Dual Drain
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.4 W
Mounting Style: SMD/SMT
Package / Case: DSO-8
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 3.8 ns
Minimum Operating Temperature: - 55 C
Rise Time: 3.8 ns
Series: BSO150N03
Factory Pack Quantity: 2500
Tradename: OptiMOS
Typical Turn-Off Delay Time: 8.7 ns
Part # Aliases: BSO150N03MDGXUMA1 SP000447476