Image BSP89 E6327
型号:

BSP89 E6327

厂商: Infineon Technologies Infineon Technologies
分类: 半导体FET - 单
描述: mosfet N-CH 240v 350ma sot-223
报错 收藏

Datasheet下载地址

本地下载 >> 第三方平台下载 >>

BSP89 E6327的详细信息

Datasheets:
BSP89:
Product Photos:
SOT223-3L:
PCN Obsolescence/ EOL:
Multiple Devices 28/Mar/2008:
Standard Package : 1,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: SIPMOS®
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Gate Charge (Qg) @ Vgs: 6.4nC @ 10V
Input Capacitance (Ciss) @ Vds: 140pF @ 25V
Power - Max: 1.8W
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Other Names: BSP89E6327TSP000011160

相关器件