厂商Fairchild Semiconductor 半导体分离式半导体 BSS123 数据手册，datasheet pdf下载

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型号：	BSS123
厂商：	Fairchild Semiconductor
标准：
分类：	半导体，分离式半导体
描述：	mosfet sot-23 N-CH logic
PDF：	预览
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BSS123的详细信息

Manufacturer：	Fairchild Semiconductor
Product Category：	MOSFET
RoHS：	Yes
Transistor Polarity：	N-Channel
Vds - Drain-Source Breakdown Voltage：	100 V
Vgs - Gate-Source Breakdown Voltage：	20 V
Id - Continuous Drain Current：	170 mA
Rds On - Drain-Source Resistance：	6 Ohms
Configuration：	Single
Maximum Operating Temperature：	+ 150 C
Pd - Power Dissipation：	360 mW
Mounting Style：	SMD/SMT
Package / Case：	SOT-23-3
Packaging：	Reel
Brand：	Fairchild Semiconductor
Channel Mode：	Enhancement
Fall Time：	9 ns
Forward Transconductance - Min：	0.8 S
Minimum Operating Temperature：	- 55 C
Rise Time：	9 ns
Series：	BSS123
Factory Pack Quantity：	3000
Typical Turn-Off Delay Time：	17 ns
Part # Aliases：	BSS123_NL
Unit Weight：	60 mg

June 2003

BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

General Description

These N-Channel enhancement mode field effect

transistors are produced using Fairchild’s proprietary,

high cell density, DMOS technology. These products

have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching

performance.These products are particularly suited for

low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and

other switching applications.

0.17 A, 100 V. R_DS(ON)= 6W @ V_GS= 10 V

R_DS(ON)= 10W @ V_GS= 4.5 V

High density cell design for extremely low R_DS(ON)

Rugged and Reliable

Compact industry standard SOT-23 surface mount

package

SOT-23

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

100

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

I_D

(Note 1)

0.17

0.68

Maximum Power Dissipation

Derate Above 25°C

0.36

P_D

mW/°C

2.8

T_J, T_STG

T_L

Operating and Storage Junction Temperature Range

- 55 to +150

°C

Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

300

350

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

BSS123

7’’

8mm

3000 units

BSS123 Rev G(W)

Ó2003 Fairchild Semiconductor Corporation

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