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BUK962R6-40E,118的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Breakdown Voltage: | 15 V |
Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 2.35 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 1.7 V |
Qg - Gate Charge: | 80.6 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 263 W |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-404-3 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Channel Mode: | Enhancement |
Fall Time: | 84 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 93 ns |
Factory Pack Quantity: | 800 |
Typical Turn-Off Delay Time: | 131 ns |
BUK962R6-40E,118相关文档
- Thermal model: BUK962R6-40E Thermal model (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- SPICE model: BUK962R6-40E Spice model (v.1.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Thermal design: BUK962R6-40E Thermal model (v.1.0)
- Brochure: Advanced MOSFET technology fromthe Automotive Power experts (v.1.0)
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