Image BUK9E4R4-80E,127
型号:

BUK9E4R4-80E,127

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 80v 120a i2pak
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BUK9E4R4-80E,127的详细信息

Datasheets:
BUK9E4R4-80E:
Product Photos:
I2PAK SOT226:
PCN Obsolescence/ EOL:
Multiple Devices 01/Jul/2014:
Standard Package : 50
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: TrenchMOS™
Packaging : Tube
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) @ Vgs: 123nC @ 5V
Input Capacitance (Ciss) @ Vds: 17130pF @ 25V
Power - Max: 349W
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Other Names: 568-9875-5934066515127BUK9E4R480E127