BUK9E4R9-60E,127的详细信息
Datasheets: | |
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BUK9E4R9-60E: | |
Product Photos: | |
I2PAK SOT226: | |
PCN Obsolescence/ EOL: | |
Multiple Devices 01/Jul/2014: | |
Standard Package : | 50 |
Category: | Discrete Semiconductor Products |
Family: | FETs - Single |
Series: | TrenchMOS™ |
Packaging : | Tube |
FET Type: | MOSFET N-Channel, Metal Oxide |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Gate Charge (Qg) @ Vgs: | 65nC @ 5V |
Input Capacitance (Ciss) @ Vds: | 9710pF @ 25V |
Power - Max: | 234W |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Other Names: | 568-9876-5934066657127BUK9E4R960E127 |
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