Image CGH40010F
型号:

CGH40010F

厂商: Cree Inc Cree Inc
标准:
分类: 半导体分离式半导体
描述: transistors RF jfet DC-6ghz 28v 10w gain 14.5db gan hemt
报错 收藏

Datasheet下载地址

厂商下载 >> 厂商下载2 >>

CGH40010F的详细信息

Manufacturer: Cree, Inc.
Product Category: Transistors RF JFET
RoHS: Yes
Type: GaN
Transistor Polarity: N-Channel
Forward Transconductance - Min: -
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Maximum Drain Gate Voltage: -
Id - Continuous Drain Current: 1.5 A
Frequency: 2 GHz to 6 GHz
Gain: 14.5 dB
Pd - Power Dissipation: -
Maximum Operating Temperature: + 150 C
Mounting Style: Screw
Package / Case: 440166
Packaging: Tube
Brand: Cree, Inc.
Ciss - Input Capacitance: 4.5 pF
Configuration: Single
Development Kit: CGH40010F-TB
Drain-Source Current at Vgs=0: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: - 40 C
Noise Figure: -
Operating Temperature Range: -
Output Power: 12.5 W
P1dB: -
Product: GaN HEMT
Rds On - Drain-Source Resistance: -
Vgs th - Gate-Source Threshold Voltage: - 3 V