Image CGHV14250F
型号: CGHV14250F
厂商: Cree Inc Cree Inc
标准:
分类: 半导体分离式半导体
描述: transistors RF jfet 1.2-1.4ghz 250w gan gain 18.2db
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CGHV14250F的详细信息

Manufacturer: Cree, Inc.
Product Category: Transistors RF JFET
RoHS: Yes
Type: GaN
Transistor Polarity: N-Channel
Forward Transconductance - Min: -
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Maximum Drain Gate Voltage: -
Id - Continuous Drain Current: 18 A
Frequency: 1.2 GHz to 1.4 GHz
Gain: 18.6 dB
Pd - Power Dissipation: -
Maximum Operating Temperature: + 130 C
Mounting Style: Screw
Package / Case: 440162
Packaging: Tube
Brand: Cree, Inc.
Ciss - Input Capacitance: -
Configuration: Single
Development Kit: CGHV14250F-TB
Drain-Source Current at Vgs=0: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: - 40 C
Noise Figure: -
Operating Temperature Range: -
Output Power: 330 W
P1dB: -
Product: GaN HEMT
Rds On - Drain-Source Resistance: -
Vgs th - Gate-Source Threshold Voltage: - 3 V

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