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Texas Instruments 
Datasheet下载地址
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CSD88537ND的详细信息
| Manufacturer： | Texas Instruments |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 60 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 8 A |
| Rds On - Drain-Source Resistance： | 12.5 mOhms |
| Configuration： | Dual |
| Qg - Gate Charge： | 14 nC |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 2.1 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOIC-8 |
| Packaging： | Reel |
| Brand： | Texas Instruments |
| Fall Time： | 19 ns |
| Forward Transconductance - Min： | 42 S |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 15 ns |
| Series： | CSD88537 |
| Factory Pack Quantity： | 2500 |
| Tradename： | NexFET |
CSD88537ND相关文档
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