Image DMN10H170SFG-13
型号:

DMN10H170SFG-13

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 100v 2.9A powerdi
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DMN10H170SFG-13的详细信息

Datasheets:
DMN10H170SFG:
Product Photos:
8-PowerWDFN:
RoHS Information:
RoHS Cert of Compliance:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) @ Vgs: 14.9nC @ 10V
Input Capacitance (Ciss) @ Vds: 870.7pF @ 25V
Power - Max: 940mW
Mounting Type: Surface Mount
Package / Case: 8-PowerVQFN
Supplier Device Package: PowerDI3333-8
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: DMN10H170SFG-13DITRDMN10H170SFG-13TRDMN10H170SFG-13TR-ND