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Image EPC2022ENG
型号:

EPC2022ENG

厂商: EPC
标准:
分类: 半导体FET - 单
描述: trans gan 100v 3mo bumped die
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EPC2022ENG的详细信息

Datasheets:
EPC2022 Datasheet Preliminary:
Product Photos:
EPC202xENG:
Mfg Application Notes:
Fourth Generation eGaN®:
FETs:
Featured Product:
Gen 4 eGaN® FETs:
Standard Package : 10
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: eGaN®
Packaging : Tray
FET Type: GaNFET N-Channel, Gallium Nitride
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Gate Charge (Qg) @ Vgs: -
Input Capacitance (Ciss) @ Vds: 1500pF @ 50V
Power - Max: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Dynamic Catalog: N-Channel Logic Level Gate FETs
For Use With: 917-1059-ND - BOARD DEV FOR EPC2022 100V EGAN
Other Names: 917-EPC2022ENGEPC2022ENGRA2