型号:

FF401R17KF6C_B2

厂商: Infineon Technologies Infineon Technologies
分类: 半导体分离式半导体
描述: igbt modules N-CH 1.7kv 650a
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FF401R17KF6C_B2的详细信息

Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1700 V
Collector-Emitter Saturation Voltage: 2.6 V
Continuous Collector Current at 25 C: 650 A
Gate-Emitter Leakage Current: 400 nA
Power Dissipation: 3.1 kW
Maximum Operating Temperature: + 125 C
Package / Case: IHM
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 4