型号:

FZ1200R33KF2C

厂商: Infineon Technologies Infineon Technologies
分类: 半导体分离式半导体
描述: igbt modules 3300v 1200a single
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FZ1200R33KF2C的详细信息

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Configuration: Triple Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max: 3300 V
Collector-Emitter Saturation Voltage: 3.4 V
Continuous Collector Current at 25 C: 2000 A
Gate-Emitter Leakage Current: 400 nA
Power Dissipation: 14.5 kW
Maximum Operating Temperature: + 125 C
Package / Case: IS5a ( 62 mm )-9
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 8

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