Image FZ3600R17HP4_B2
型号:

FZ3600R17HP4_B2

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: igbt modules igbt 1700v 3600a
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FZ3600R17HP4_B2的详细信息

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Yes
Product: IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max: 1700 V
Collector-Emitter Saturation Voltage: 2.25 V
Continuous Collector Current at 25 C: 3600 A
Gate-Emitter Leakage Current: 400 nA
Power Dissipation: 21 kW
Maximum Operating Temperature: + 150 C
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw