Image IPB110N06L G
型号:

IPB110N06L G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 60v 78a TO-263
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IPB110N06L G的详细信息

Datasheets:
IPB,IPP110N06L G:
Product Photos:
TO-263:
PCN Obsolescence/ EOL:
Multiple Devices 11/Dec/2009:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Digi-Reel®
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 78A, 10V
Vgs(th) (Max) @ Id: 2V @ 94µA
Gate Charge (Qg) @ Vgs: 79nC @ 10V
Input Capacitance (Ciss) @ Vds: 2700pF @ 30V
Power - Max: 158W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Other Names: IPB110N06LGINDKR