厂商International Rectifier 半导体分离式半导体 IRF3205PBF 数据手册，datasheet pdf下载

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型号：	IRF3205PBF
厂商：	International Rectifier
标准：
分类：	半导体，分离式半导体
描述：	mosfet mosft 55v 98a 8mohm 97.3nc
PDF：	预览
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Datasheet下载地址

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IRF3205PBF的详细信息

Manufacturer：	International Rectifier
Product Category：	MOSFET
RoHS：	Yes
Transistor Polarity：	N-Channel
Vds - Drain-Source Breakdown Voltage：	55 V
Vgs - Gate-Source Breakdown Voltage：	20 V
Id - Continuous Drain Current：	98 A
Rds On - Drain-Source Resistance：	8 mOhms
Qg - Gate Charge：	97.3 nC
Pd - Power Dissipation：	150 W
Mounting Style：	Through Hole
Package / Case：	TO-220-3
Packaging：	Tube
Brand：	International Rectifier
Factory Pack Quantity：	50

PD-94791B

IRF3205PbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 55V

R_DS(on)= 8.0mΩ

l Fully Avalanche Rated

l Lead-Free

I_D= 110A^ꢀ

Description

Advanced HEXFET^®Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipationlevels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

110 ꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

390

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

07/23/10

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