![]() |
Datasheet下载地址
本地下载 >> |
IRF4905的详细信息
-
亲,您要的详细信息都在下载文档里了!
PD - 9.1280C
IRF4905
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = -55V
RDS(on) = 0.02Ω
G
l P-Channel
l Fully Avalanche Rated
Description
ID = -74A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter
Max.
-74
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-52
A
-260
200
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
1.3
VGS
EAS
IAR
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy
Avalanche Current
930
mJ
-38
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
20
mJ
-5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.75
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
8/25/97
扫码用手机查看Datasheet
更方便
扫码关注嵌入式ARM

新增器件
-
dcdc升压电路 PIC程序编写
预算:¥20002021-01-10
-
RN8209直流采集装置的校准,包括电压、电流、电量,精度:
预算:¥10002021-01-11
-
智能马桶控制板
预算:¥300002021-01-11
-
Labview软件编程
预算:¥2000019小时前
-
STM32开发光电传感器
预算:¥25000021小时前
-
STM32F429项目软件硬件
预算:¥300001天前