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IRF540的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | No |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 28 A |
Rds On - Drain-Source Resistance: | 77 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 150 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 43 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 44 ns |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 53 ns |
IRF540, SiHF540
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
100
Available
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
R
DS(on) ()
VGS = 10 V
0.077
RoHS*
Qg (Max.) (nC)
72
11
COMPLIANT
Q
Q
gs (nC)
gd (nC)
• Ease of Paralleling
32
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Configuration
Single
D
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF540PbF
SiHF540-E3
IRF540
Lead (Pb)-free
SnPb
SiHF540
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
100
± 20
28
V
VGS
T
C = 25 °C
Continuous Drain Current
VGS at 10 V
ID
TC = 100 °C
20
A
Pulsed Drain Currenta
IDM
110
Linear Derating Factor
1.0
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
230
28
EAR
15
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
150
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
5.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 175
300d
10
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 , IAS = 28 A (see fig. 12).
c. ISD 28 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91021
S11-0510-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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