Datasheet下载地址
本地下载 >> 第三方平台下载 >> |
IRF640的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | No |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 18 A |
Rds On - Drain-Source Resistance: | 180 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 125 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 36 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 51 ns |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 45 ns |
IRF640, SiHF640
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
200
Available
• Repetitive Avalanche Rated
• Fast Switching
R
DS(on) (Ω)
VGS = 10 V
0.18
RoHS*
Qg (Max.) (nC)
70
13
COMPLIANT
• Ease of Paralleling
Q
Q
gs (nC)
gd (nC)
• Simple Drive Requirements
39
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
TO-220AB
IRF640PbF
SiHF640-E3
IRF640
Package
Lead (Pb)-free
SnPb
SiHF640
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
200
V
VGS
± 20
TC = 25 °C
TC = 100 °C
18
Continuous Drain Current
V
GS at 10 V
ID
11
A
Pulsed Drain Currenta
IDM
72
Linear Derating Factor
1.0
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
580
18
EAR
13
125
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
5.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 Ω, IAS = 18 A (see fig. 12).
c. ISD ≤ 18 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91036
S11-0509-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
扫码用手机查看Datasheet
更方便
扫码关注嵌入式ARM

同类器件
-
外包服务器软件
预算:¥100002021-01-20
-
优化代写stm32+stm8程序
预算:¥25002天前
-
PC端上位机开发
预算:¥100002天前
-
索尼CMOS的调试:IMX482
预算:¥15000018小时前
-
海思ISP开发
预算:¥1000056分钟前
-
模拟放大器电路自激消除改进
预算:¥50005小时前