厂商Vishay Siliconix 半导体分离式半导体 IRF640 数据手册，datasheet pdf下载

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型号：	IRF640
厂商：	Vishay Siliconix
分类：	半导体，分离式半导体
描述：	mosfet N-chan 200v 18 amp
PDF：	预览
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IRF640的详细信息

Manufacturer：	Vishay
Product Category：	MOSFET
RoHS：	No
Brand：	Vishay / Siliconix
Transistor Polarity：	N-Channel
Vds - Drain-Source Breakdown Voltage：	200 V
Vgs - Gate-Source Breakdown Voltage：	20 V
Id - Continuous Drain Current：	18 A
Rds On - Drain-Source Resistance：	180 mOhms
Configuration：	Single
Maximum Operating Temperature：	+ 150 C
Pd - Power Dissipation：	125 W
Mounting Style：	Through Hole
Package / Case：	TO-220-3
Packaging：	Tube
Channel Mode：	Enhancement
Fall Time：	36 ns
Minimum Operating Temperature：	- 55 C
Rise Time：	51 ns
Factory Pack Quantity：	50
Typical Turn-Off Delay Time：	45 ns

IRF640, SiHF640

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

200

Available

• Repetitive Avalanche Rated

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

0.18

RoHS*

Q_g(Max.) (nC)

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

TO-220AB

IRF640PbF

SiHF640-E3

IRF640

Package

Lead (Pb)-free

SnPb

SiHF640

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

200

V_GS

± 20

T_C= 25 °C

T_C= 100 °C

Continuous Drain Current

_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

580

E_AR

125

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.7 mH, R_g= 25 Ω, I_AS= 18 A (see fig. 12).

c. I_SD≤ 18 A, dI/dt ≤ 150 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91036

S11-0509-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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