型号:

IXFH12N100

厂商: IXYS IXYS
标准:
分类: 半导体分离式半导体
描述: mosfet 1kv 12a
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IXFH12N100的详细信息

Manufacturer: IXYS
Product Category: MOSFET
RoHS: Yes
Brand: IXYS
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 12 A
Rds On - Drain-Source Resistance: 1.05 Ohms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Channel Mode: Enhancement
Fall Time: 32 ns
Forward Transconductance - Min: 10 S
Minimum Operating Temperature: - 55 C
Rise Time: 33 ns
Series: IXFH12N100
Factory Pack Quantity: 30
Typical Turn-Off Delay Time: 62 ns
Unit Weight: 6.500 g