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IXFH150N17T2的详细信息
Manufacturer: | IXYS |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 175 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 150 A |
Rds On - Drain-Source Resistance: | 12 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V to 4.5 V |
Qg - Gate Charge: | 63 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 880 W |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Brand: | IXYS |
Channel Mode: | Enhancement |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 165 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 16 ns |
Series: | IXFH150N17 |
Factory Pack Quantity: | 30 |
Typical Turn-Off Delay Time: | 50 ns |
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