Image IXTF1N450
型号:

IXTF1N450

厂商: IXYS IXYS
标准:
分类: 半导体分离式半导体
描述: mosfet 4500v 0.9A HV power mosfet
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >> 厂商下载2 >>

IXTF1N450的详细信息

Manufacturer: IXYS
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 4.5 kV
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 900 mA
Rds On - Drain-Source Resistance: 95 Ohms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 3.5 V to 6 V
Qg - Gate Charge: 40 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 165 W
Mounting Style: Through Hole
Package / Case: ISOPLUS i4-PAK-3
Packaging: Tube
Brand: IXYS
Channel Mode: Enhancement
Fall Time: 127 ns
Forward Transconductance - Min: 0.46 S
Minimum Operating Temperature: - 55 C
Rise Time: 60 ns
Series: IXTF1N450
Factory Pack Quantity: 25
Typical Turn-Off Delay Time: 58 ns