Image LMV358
型号: LMV358
厂商: Texas Instruments Texas Instruments
分类: 半导体
描述: dual operational amplifiers(低电压双运放)
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Feature: Dual Low-Voltage Rail-to-Rail Output Operational Amplifier
June 2003  
LMV321/LMV358/LMV324 Single/Dual/Quad  
General Purpose, Low Voltage, Rail-to-Rail Output  
Operational Amplifiers  
General Description  
The LMV358/324 are low voltage (2.7–5.5V) versions of the  
dual and quad commodity op amps, LM358/324, which cur-  
rently operate at 5–30V. The LMV321 is the single version.  
(For V+ = 5V and V= 0V, Typical Unless Otherwise Noted)  
n Guaranteed 2.7V and 5V Performance  
n No Crossover Distortion  
The LMV321/358/324 are the most cost effective solutions  
for the applications where low voltage operation, space sav-  
ing and low price are needed. They offer specifications that  
meet or exceed the familiar LM358/324. The LMV321/358/  
324 have rail-to-rail output swing capability and the input  
common-mode voltage range includes ground. They all ex-  
hibit excellent speed-power ratio, achieving 1MHz of band-  
width and 1V/µs of slew rate with low supply current.  
n Space Saving Package  
n Industrial Temp. Range  
n Gain-Bandwidth Product  
n Low Supply Current  
— LMV321  
— LMV358  
— LMV324  
n Rail-to-Rail Output Swing 10k  
SC70-5 2.0x2.1x1.0mm  
−40˚C to +85˚C  
V+ −10mV  
The LMV321 is available in space saving SC70-5, which is  
approximately half the size of SOT23-5. The small package  
saves space on pc boards, and enables the design of small  
portable electronic devices. It also allows the designer to  
place the device closer to the signal source to reduce noise  
pickup and increase signal integrity.  
n VCM  
−0.2V to V+−0.8V  
n Active Filters  
n General Purpose Low Voltage Applications  
n General Purpose Portable Devices  
The chips are built with National’s advanced submicron  
silicon-gate BiCMOS process. The LMV321/358/324 have  
bipolar input and output stages for improved noise perfor-  
mance and higher output current drive.  
Output Voltage Swing vs. Supply Voltage  
Gain and Phase vs. Capacitive Load  
© 2003 National Semiconductor Corporation