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型号: | MMBT5401 |
厂商: |
|
标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | transistors bipolar - bjt pnp transistor general purpose |
PDF: | 预览 |
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MMBT5401的详细信息
Manufacturer: | Fairchild Semiconductor |
---|---|
Product Category: | Transistors Bipolar - BJT |
RoHS: | Yes |
Configuration: | Single |
Transistor Polarity: | PNP |
Collector- Base Voltage VCBO: | - 160 V |
Collector- Emitter Voltage VCEO Max: | - 150 V |
Emitter- Base Voltage VEBO: | - 5 V |
Collector-Emitter Saturation Voltage: | - 0.5 V |
Maximum DC Collector Current: | 0.6 A |
Gain Bandwidth Product fT: | 300 MHz |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23 |
Brand: | Fairchild Semiconductor |
Continuous Collector Current: | 0.6 A |
DC Collector/Base Gain hfe Min: | 60 |
DC Current Gain hFE Max: | 240 |
Maximum Power Dissipation: | 350 mW |
Minimum Operating Temperature: | - 55 C |
Packaging: | Reel |
Series: | MMBT5401 |
Factory Pack Quantity: | 3000 |
Part # Aliases: | MMBT5401_NL |
Unit Weight: | 60 mg |
MMBT5401
PNP General Purpose Amplifier
•
This device is designed as a general purpose amplifier and switch for
applications requiring high voltage.
C
E
B
SOT-23
Mark: 2L
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Collector-Emitter Voltage
Value
-150
Units
V
V
V
V
CEO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
-160
V
CBO
EBO
-5.0
V
I
- Continuous
-600
mA
°C
C
T , T
Operating and Storage Junction Temperature Range
-55 ~ 150
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
BV
BV
BV
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
I
= -1.0mA, I = 0
-150
-160
-5.0
V
V
V
CEO
CBO
EBO
C
B
= -100µA, I = 0
C
E
I = -10µA, I = 0
E
C
I
V
V
= -120V, I = 0
-50
-50
nA
µA
CBO
CB
CB
E
= -120V, I = 0, T = 100°C
E
a
I
Emitter Cutoff Current
V
= -3.0V, I =0
-50
nA
EBO
EB
C
On Characteristics *
h
DC Current Gain
I
= -1.0mA, V = -5.0V
50
60
50
FE
C
CE
I
I
= -10mA, V = -5.0V
240
C
C
CE
= -50mA, V = -5.0V
CE
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
= -10mA, I = -1.0mA
-0.2
-0.5
V
V
CE
BE
C
C
B
= -50mA, I = -5.0mA
B
I
I
= -10mA, I = -1.0mA
-1.0
-1.0
V
V
C
C
B
= -50mA, I = -5.0mA
B
Small Signal Characterics
f
Current Gain Bandwidth Product
I
= -10mA, V = -10V,
100
300
MHz
T
C
CE
f = 100MHz
C
N
Output Capacitance
Noise Figure
V
= -10V, I = 0, f = 1MHz
6.0
8.0
pF
dB
ob
F
CB
E
I
= -250µA, V = -5.0V, R = 1.0KΩ
CE S
C
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2004 Fairchild Semiconductor Corporation
Rev. B1, August 2004
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