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Image MMBT5401
型号： MMBT5401
厂商： Fairchild Semiconductor Fairchild Semiconductor
标准：
分类： 半导体 ， 分离式半导体
描述： transistors bipolar - bjt pnp transistor general purpose
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MMBT5401的详细信息

Manufacturer： Fairchild Semiconductor
Product Category： Transistors Bipolar - BJT
RoHS： Yes
Configuration： Single
Transistor Polarity： PNP
Collector- Base Voltage VCBO： - 160 V
Collector- Emitter Voltage VCEO Max： - 150 V
Emitter- Base Voltage VEBO： - 5 V
Collector-Emitter Saturation Voltage： - 0.5 V
Maximum DC Collector Current： 0.6 A
Gain Bandwidth Product fT： 300 MHz
Maximum Operating Temperature： + 150 C
Mounting Style： SMD/SMT
Package / Case： SOT-23
Brand： Fairchild Semiconductor
Continuous Collector Current： 0.6 A
DC Collector/Base Gain hfe Min： 60
DC Current Gain hFE Max： 240
Maximum Power Dissipation： 350 mW
Minimum Operating Temperature： - 55 C
Packaging： Reel
Series： MMBT5401
Factory Pack Quantity： 3000
Part # Aliases： MMBT5401_NL
Unit Weight： 60 mg
MMBT5401  
PNP General Purpose Amplifier  
•
This device is designed as a general purpose amplifier and switch for  
applications requiring high voltage.  
C
E
B
SOT-23  
Mark: 2L  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Emitter Voltage  
Value  
-150  
Units  
V
V
V
V
CEO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
-160  
V
CBO  
EBO  
-5.0  
V
I
- Continuous  
-600  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Notes:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
= -1.0mA, I = 0  
-150  
-160  
-5.0  
V
V
V
CEO  
CBO  
EBO  
C
B
= -100µA, I = 0  
C
E
I = -10µA, I = 0  
E
C
I
V
V
= -120V, I = 0  
-50  
-50  
nA  
µA  
CBO  
CB  
CB  
E
= -120V, I = 0, T = 100°C  
E
a
I
Emitter Cutoff Current  
V
= -3.0V, I =0  
-50  
nA  
EBO  
EB  
C
On Characteristics *  
h
DC Current Gain  
I
= -1.0mA, V = -5.0V  
50  
60  
50  
FE  
C
CE  
I
I
= -10mA, V = -5.0V  
240  
C
C
CE  
= -50mA, V = -5.0V  
CE  
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
= -10mA, I = -1.0mA  
-0.2  
-0.5  
V
V
CE  
BE  
C
C
B
= -50mA, I = -5.0mA  
B
I
I
= -10mA, I = -1.0mA  
-1.0  
-1.0  
V
V
C
C
B
= -50mA, I = -5.0mA  
B
Small Signal Characterics  
f
Current Gain Bandwidth Product  
I
= -10mA, V = -10V,  
100  
300  
MHz  
T
C
CE  
f = 100MHz  
C
N
Output Capacitance  
Noise Figure  
V
= -10V, I = 0, f = 1MHz  
6.0  
8.0  
pF  
dB  
ob  
F
CB  
E
I
= -250µA, V = -5.0V, R = 1.0KΩ  
CE S  
C
f = 10Hz to 15.7KHz  
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
©2004 Fairchild Semiconductor Corporation  
Rev. B1, August 2004  

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