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NDD03N50Z-1G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 2.6 A |
Rds On - Drain-Source Resistance: | 3.3 Ohms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 58 W |
Mounting Style: | Through Hole |
Package / Case: | IPAK-3 |
Brand: | ON Semiconductor |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 75 |
NDD03N50Z-1G相关文档
- Simulation Model: NDD03N50Z PSpice Model
- Simulation Model: NDD03N50Z Spice3 Model
- Package Drawing: IPAK (DPAK−3 Insertion Mount)
- Package Drawing: DPAK 4 LEAD Single Gauge Surface Mount
- Simulation Model: NDD03N50Z Saber Model
- Simulation Model: NDD03N50Z Spice2 Model
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