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NDF06N62ZG的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 620 V |
Id - Continuous Drain Current: | 3.8 A |
Rds On - Drain-Source Resistance: | 980 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 3 V to 4.5 V |
Qg - Gate Charge: | 32 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 31 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220FP-3 |
Brand: | ON Semiconductor |
Forward Transconductance - Min: | 5 S |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 50 |
NDF06N62ZG相关文档
- Simulation Model: NDF06N62Z Spice3 Model
- Simulation Model: NDF06N62Z Spice2 Model
- Package Drawing: TO-220 3 LEAD FULLPAK
- Simulation Model: NDF06N62Z Saber Model
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