Image NE3512S02-A
型号:

NE3512S02-A

厂商: CEL
标准:
分类: 半导体分离式半导体
描述: transistors RF jfet C to Ku band super low noise amp N-Ch
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NE3512S02-A的详细信息

Manufacturer: CEL
Product Category: Transistors RF JFET
RoHS: Yes
Brand: CEL
Type: GaAs HEMT
Forward Transconductance - Min: 55 mS
Vds - Drain-Source Breakdown Voltage: 4 V
Vgs - Gate-Source Breakdown Voltage: - 3 V
Id - Continuous Drain Current: 70 mA
Frequency: 12 GHz
Gain: 13.5 dB
Pd - Power Dissipation: 165 mW
Maximum Operating Temperature: + 125 C
Mounting Style: SMD/SMT
Package / Case: S0-2
Gate-Source Cutoff Voltage: 4 V
Noise Figure: 0.35 dB
Product: RF JFET