首页 > NJR > 半导体 > 射频半导体 > NJG1127HB6-TE1
型号:

NJG1127HB6-TE1

厂商: NJR
标准:
分类: 半导体射频半导体
描述: RF amplifier 800 mhz band lna
报错 收藏

Datasheet下载地址

厂商下载 >>

NJG1127HB6-TE1的详细信息

Manufacturer: NJR
Product Category: RF Amplifier
RoHS: Yes
Brand: NJR
Type: General Purpose Amplifier
Operating Frequency: 800 MHz
Power Gain Typ: 15 dB
Noise Figure: 1.4 dB
Supply Current: 16 mA
Maximum Operating Temperature: + 85 C
Mounting Style: SMD/SMT
Package / Case: USB-8-B6
Packaging: Reel
Maximum Power Dissipation: 160 mW
Minimum Operating Temperature: - 40 C
Number of Channels: 1 Channel
Series: NJG1127
Factory Pack Quantity: 3000
Tradename: NJG112