 |
ON Semiconductor 
NJL4281DG的详细信息
| Datasheets： | |
|---|---|
| NJL4281,4302D： | |
| Product Photos： | |
| TO-264-5： | |
| PCN Obsolescence/ EOL： | |
| Multiple Devices 30/Mar/2012： | |
| Standard Package ： | 25 |
| Category： | Discrete Semiconductor Products |
| Family： | Transistors (BJT) - Single |
| Series： | - |
| Packaging ： | Tube |
| Transistor Type： | NPN + Diode (Isolated) |
| Current - Collector (Ic) (Max)： | 15A |
| Voltage - Collector Emitter Breakdown (Max)： | 350V |
| Vce Saturation (Max) @ Ib, Ic： | 1V @ 800mA, 8A |
| Current - Collector Cutoff (Max)： | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce： | 80 @ 5A, 5V |
| Power - Max： | 230W |
| Frequency - Transition： | 35MHz |
| Mounting Type： | Through Hole |
| Package / Case： | TO-264-5 |
| Supplier Device Package： | TO-264 |
相关器件
扫码手机查看更方便
同类器件
