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ON Semiconductor 
Datasheet下载地址
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NTD6415AN-1G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 100 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 23 A |
| Rds On - Drain-Source Resistance： | 55 mOhms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 2 V to 4 V |
| Qg - Gate Charge： | 29 nC |
| Maximum Operating Temperature： | + 175 C |
| Pd - Power Dissipation： | 83 W |
| Mounting Style： | Through Hole |
| Package / Case： | IPAK-3 |
| Brand： | ON Semiconductor |
| Fall Time： | 37 ns |
| Forward Transconductance - Min： | 13 S |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 37 ns |
| Factory Pack Quantity： | 75 |
| Typical Turn-Off Delay Time： | 30 ns |
NTD6415AN-1G相关文档
- Simulation Model: PSpice Model
- Simulation Model: Saber Model
- Simulation Model: Spice3 Model
- Package Drawing: IPAK (DPAK−3 Insertion Mount)
- Simulation Model: Spice2 Model
- Package Drawing: DPAK 4 LEAD Single Gauge Surface Mount
- EOL: Product Discontinuance Notice
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