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NTLJD3115PT1G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | - 20 V |
Vgs - Gate-Source Breakdown Voltage: | 8 V |
Id - Continuous Drain Current: | 3.3 A |
Rds On - Drain-Source Resistance: | 106 mOhms |
Configuration: | Dual |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.5 W |
Mounting Style: | SMD/SMT |
Package / Case: | DFN2020-6 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 13.2 ns, 15 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 13.2 ns, 15 ns |
Series: | NTLJD3115P |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 13.7 ns, 19.8 ns |
NTLJD3115PT1G相关文档
- EOL: On Semiconductor - EOL 5-17-10
- Simulation Model: NTLJD3115P P Spice Model
- Simulation Model: NTLJD3115P Saber Model
- Application Note: WDFN-6 2x2 µCool™ 506AN Dual MOSFET Board Level Notes
- Package Drawing: WDFN6, 2x2, 0.65P
- Simulation Model: NTLJD3115P Spice 2 Model
- Simulation Model: NTLJD3115P Spice 3 Model
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