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ON Semiconductor 
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NTMFD4902NFT1G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 30 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 18.2 A |
| Rds On - Drain-Source Resistance： | 8 mOhms |
| Configuration： | Dual |
| Vgs th - Gate-Source Threshold Voltage： | 2.2 V |
| Qg - Gate Charge： | 9.7 nC, 11.5 nC |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 3.45 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | DFN-8 |
| Packaging： | Reel |
| Brand： | ON Semiconductor |
| Fall Time： | 4 ns, 4.7 ns |
| Forward Transconductance - Min： | 28 S, 35 S |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 15 ns, 15.2 ns |
| Series： | NTMFD4902NF |
| Factory Pack Quantity： | 1500 |
| Typical Turn-Off Delay Time： | 14 ns, 17.7 ns |
NTMFD4902NFT1G相关文档
- Application Note: Description of the ON Semiconductor MOSFET Model
- Package Drawing: DFN8 5x6, 1.27P (SO8FL-Dual-Asymmetrical)
- Simulation Model: Spice3 Model
- Simulation Model: PSpice Model
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