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PSMN017-60YS,115的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 54 V |
Id - Continuous Drain Current: | 31 A |
Rds On - Drain-Source Resistance: | 24.7 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Pd - Power Dissipation: | 74 W |
Mounting Style: | SMD/SMT |
Package / Case: | LFPAK-4 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Factory Pack Quantity: | 1500 |
PSMN017-60YS,115相关文档
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- SPICE model: PSMN017-60YS Spice model (v.1.0)
- Application note: LFPAK MOSFET thermal design guide - Part 2 (v.2.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Application note: LFPAK MOSFET thermal design guide (v.2.0)
- PCN: Final Product Change Notification
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